Investigations of GaN-based vertical field effect transistors for applications in high-power electronics

In this project, current aperture vertical field effect transistor concepts will be investigated for the analysis, epitaxy, processing, and characterization of electronic power devices based on group III-N semiconductors. The aim of this project is to investigate vertical transistors in order to enhance the key device parameters on-state resistance and breakdown voltage independently which is not possible for conventional lateral devices.

Ansprechpartner: Prof. Dr. Dr. Ambacher
Tel: 0761 5159-410
Email: oliver.ambacher@imtek.de

Projektbeginn: 2018
Projektende: 2020

Ambacher O

Institut für Mikrosystemtechnik IMTEK
Georg-Köhler-Allee 106
79110 Freiburg

Freiburger Materialforschungszentrum (FMF)

Stefan-Meier-Str. 21
79104 Freiburg i. Br.

Telefon: 0761-203 4711
Email: fmf@fmf.uni-freiburg.de
www.fmf.uni-freiburg.de

Prof. Dr. Ferdinand Scholz, Universität Ulm, Dr. Rüdiger Quay, Fraunhofer IAF

• DFG, DFG