Stroboscopic and correlative diffraction imaging (STROBOS-CODE)

Goal of the project is the extension STROBOS-CODE at the German-Russian end station of the IMAGE-beamline at ANKA, aiming to enable correlative and time-resolved 2D and 3D imaging of crystalline samples, based on diffraction contrast and the use of stroboscopic methods. The envisaged spherically operating detector system will allow flexible and innovative digital white-beam topography with millisecond temporal resolution for in situ investigations, with the option for simultaneous detection of the transmitted beam. By means of an additional sample manipulation stage for angular alignment, the already established method of laminographic 3D imaging will be extended with high resolution diffraction contrast capabilities. The required methodical development will include implementation, adaption, and extension of algorithms for multi-dimensional reconstruction and motion analysis, as well as the automatization of correlation procedures. The functionality of the experimental station and of the developed methods will be demonstrated by selected application cases.

Weitere Informationen: http://www.strobos-code.org/
Ansprechpartner: A. N. Danilewsky
Tel: 0761 203 6450
Email: a.danilewsky@krist.uni-freiburg.de

Projektbeginn: 01.10.2014
Projektende: 30.03.2020

Prof. Dr. A. N. Danilewsky

Albert-Ludwigs-Universität Freiburg

• BMBF

X-ray diffraction imaging, 3D reconstruction, milli-second topography, in-situ characterisation

• Asadchikov V. E., A.V. Buzmakov, F. Chukhovskii, I. Dychkova, D.A. Zolotov, A. N. Danilewsky, T. Baumbach, S. Bode, S. Haaga, D. Hänschke, M. Kabukcuoglu, M. Balzer, M. Caselle, E. Suvorov: X-ray topo-tomography studies of linear dislocations in silicon single crystals J Appl Crystallogr, 2018; 51 (6): 1-7.
• Baumbach T., Hänschke D., Helfen L., Hamann E., Farago T., Bode S., Haaga S., Kabukcuoglu M., Danilewsky A. N.: 3D Material Characterization by Laminographic Imaging: Status and Prospects 2018; Abstracts: 192 (German Conference for Research with Synchrotron Radiation, Neutrons and Ion Beams at Large Facilities, SNI 2018, Garching, Sept. 17th-19th,).
• Bode, S., Hänschke, D., Haaga, S., Kabukcuoglu, M., Hamann, E., Helfen, L., Danilewsky, A. N., Baumbach, T., Cowan, T.: Enabling Quasi 4D Imaging of Dislocation Dynamics in Semiconductor Wafers by X-Ray Diffraction Laminography 2018; Abstracts: 169 (14th Biennial Conference on High-Resolution X-Ray Diffraction and Imaging, XTOP 2018, Bari, Italy, 3rd -7th Sept.).
• Bode S., Hänschke D., Hamann E., Kabukcuoglu M., Haaga S., Helfen L., Danilewsky A. N., Baumbach T.: Extension of X-Ray Diffraciton Laminography: A 4D Imaging Method for the Investigation of Defect Dynamics in Crystalline Materials Abstracts, 2018; Posterpreis (26th Annual Meeting of the German Crystallographic Society (DGK) 2018, Essen, Germany, March 5-8, 2018).
• Fritsch P., Kabukcuoglu M. P., Haaga S., Baumbach T., Danilewsky A. N.: In-situ Observation of Dislocations in GaAs during Annealing Process by Means of Synchrotron White Beam X-ray Topography Abstracts, 2018: 50 (1st German-Austrian Conference on Crystal Growth (GACCG/DKT2018), Vienna, Austria, Feb. 14-16 2018).
• Fritsch P., Kabukcuoglu M. P., Haaga S., Baumbach T., Danilewsky A. N.: In situ Studies of Dislocations in GaAs with Synchrotron White Beam X-ray Topography Abstracts, 2018 (26th Annual Meeting of the German Crystallographic Society (DGK) 2018, Essen, Germany, March 5-8, 2018).
• Grenzer, J., Olbinado, M., Rack, A., Danilewsky, A. N., Cowan, T.: Ultra-high-speed X-ray imaging of laser-driven shock into solid materials using synchrotron light 2018; Abstracts: 13 (German Conference for Research with Synchrotron Radiation, Neutrons and Ion Beams at Large Facilities, SNI 2018, Garching, Sept. 17th-19th,).
• Grenzer, J., Rack, A., Olbinado, M. P., De Resseguier, T., Danilewsky, A. N., Kraus, D., Cowan, T.: Ultra-High-Speed X-Ray Imaging of Laser Driven Processes Using Synchrotron Light 2018; Abstracts: 27 (14th Biennial Conference on High-Resolution X-Ray Diffraction and Imaging, XTOP 2018, Bari, Italy, 3rd -7th Sept.).
• Haaga, S., Hänschke, D., Bode, S., Kabukcuoglu, M., Hamann, E., Helfen, L., Roder, M., Hurst, M., Baumbach, T., Danilewsky, A. N.: 3D Imaging of Crystalline Defects in Various Semiconducting Materials by X-Ray Diffraction Laminograpy 2018; Abstracts: 38 (14th Biennial Conference on High-Resolution X-Ray Diffraction and Imaging, XTOP 2018, Bari, Italy, 3rd -7th Sept.).
• Haaga S., Hänschke D., Hamann E., Kabukcuoglu M., Bode S., Helfen L., Baumbach T., Danilewsky A. N.: 3D Imaging of Crystalline Defects in High Absorbing Semiconductor Materials with X-Ray Diffraction Laminography (XDL) on the Example of GaAs Wafers 2018 (26th Annual Meeting of the German Crystallographic Society (DGK) 2018, Essen, Germany, March 5-8, 2018).
• Hänschke, D., Bode, S., Kabukcuoglu, M., Haaga, S., Hamann, E., Helfen, L., Danilewsky, A. N., Baumbach, T., Baumbach, T., Danilewsky, A. N.: 3D Characterisation of Crystal Defects by X-Ray Diffraction Laminograpy: Status and Prospects 2018; Abstracts: 163 (14th Biennial Conference on High-Resolution X-Ray Diffraction and Imaging, XTOP 2018, Bari, Italy, 3rd -7th Sept.).
• Kabukcuoglu, M., Hänschke, D., Bode, S., Haaga, S., Hamann, E., Helfen, L., Baumbach, T., Danilewsky, A. N.: Investigating Dislocation Dynamics in Silicon Wafers by Means of X-Ray Diffraction Laminograpy 2018; Abstracts: 41 (14th Biennial Conference on High-Resolution X-Ray Diffraction and Imaging, XTOP 2018, Bari, Italy, 3rd -7th Sept.).
• Kabukcuoglu M., Hänschke D., Hamann E., Bode S., Haaga S., Helfen L., Baumbach T., Danilewsky A. N.: 4D Investigation of the Dislocation Propagation and their Interaction Depending on Thermal Stress by Means of X-ray Diffraction Laminography Abstracts, 2018; Posterpreis (26th Annual Meeting of the German Crystallographic Society (DGK) 2018, Essen, Germany, March 5-8, 2018).
• Roder, M., Wellmann, P., Arzig, S., Danilewsky, A. N.: Characterization of defects and strain with Synchrotron White Beam X-ray Topography (SWXRT) and High Resolution X-ray Diffractometry (HRXRD) in 4H-SiC 2018; Abstracts: 49 (14th Biennial Conference on High-Resolution X-Ray Diffraction and Imaging, XTOP 2018, Bari, Italy, 3rd -7th Sept.).
• Roder M., Arzig M., Steiner J., Wellmann P., Danilewsky A. N.: Characterisation of 4H-SiC 2018 (DGKK-Arbeitskreis „Massive Halbleiterkristalle“).
• Roder M., Danilewsky A. N., Wellmann P.: Defect and Strain Characterization of 4H-SiC Abstracts, 2018 (26th Annual Meeting of the German Crystallographic Society (DGK) 2018, Essen, Germany, March 5-8, 2018).
• Roder M., Danilewsky A. N., Wellmann P.: Characterisation of Defects and Strain in 4H-SiC Abstracts, 2018: 57 (1st German-Austrian Conference on Crystal Growth (GACCG/DKT2018), Vienna, Austria, Feb. 14-16 2018).
• Danilewsky A. N., Rack A., Scheel M.: Dislocation and crack dynamics in silicon analyzed by X-ray diffraction imaging Abstracts, 2017 (TOPICAL DAY: Imaging and Image Analysis IX, Empa, Dübendorf, Schweiz).
• Gorji N. E., Tanner B. K., Vijayaraghavan R. K., Danilewsky A. N., McNally P. J.: Nondestructive, in situ mapping of die surface displacements in encapsulated IC chip packages using x-ray diffraction imaging techniques 2017 (67th Electronic Components and Technology Conference, ECTC 67, Lake Buena Vista, Florid, USA, May 30 - June 2).
• Hänschke D., Danilewsky A., Hamann E., Bode S., Helfen L., Baumbach T.: Correlated 3D Imaging of Dislocations: Insight into the Onset of Thermal Slip in Semiconductor Wafers Z Krist-cryst Mater, 2017 Suppl. 37: 10 (25. Jahrestagung Deutsche Gesellschaft für Kristallographie 2017, Karlsruhe, 27. - 30. 2017).
• Hänschke D., Danilewsky A. N., Helfen L., Hamann E., Baumbach T.: Correlated Three-Dimensional Imaging of Dislocations: Insight into the Onset of Thermal Slip in Semiconductor Wafers Phys Rev Lett, 2017; 119: 215504. : https://doi.org/10.1103/PhysRevLett.119.215504
• Tanner, B., Allen, D., Wittge J., Danilewsky A. N., Garagorri J., Gorostegui-Colinas E., Elizalde M. R, McNally P. J.: Quantitative Imaging of the Stress/Strain Fields and Generation of Macroscopic Cracks from Indents in Silicon Crystals, 2017; 7 (11): 347. : http://dx.doi.org/10.3390/cryst7110347
• Tanner B., Danilewsky A. N., Bose A., Vijayaraghavan R. K., Cowley A., McNally P. J.: Non-destructive X-ray diffraction measurement of warpage in silicon die embedded in integrated circuit packages J Appl Crystallogr, 2017; 50: 547-554. : https://doi.org/10.1107/S1600576717003132
• Asadchikov, V. E., Alexeev, P., Bessas, D., Buzmakov, A. V., Cecilia, A., Chumakov, A., Danilewsky, A. N., Deryabin, A. N., Härtwig, J., Hermann, R. P., Jafari, A., Kanevsky, V. M., Prokhorov, I. A., Roshchin, B. S., Sergueev, I., Wille, H. C.: Growth of single crystal sapphire for applications in X-ray backscattering 2016: Fr1-T06-3 (18th International Conference on Crystal Growth and Epitaxy, ICCGE-18, Nagoya, Japan, Aug. 7-12).
• Asadchikov V. E., Butashin, A.V., Buzmakov, A.V., Deryabin, A.N., Kanevsky, V.M., Prokhorov, I. A., Roshchin, B. S., Volkov, Yu. O., Zolotov, D. A., Jafari, P., Alexeev, P., Cecilia, A., Baumbach, T., Bessas, D., Danilewsky, A. N., Sergueev, I., Wille H. C., Hermann, H. P.: Single-crystal sapphire microstructure for high-resolution synchrotron x-ray monochromators Cryst Res Technol, 2016; 1-9 (4): 290-298. (download: http://dx.doi.org/10.1002/crat.201500343)