Betreuung und Optimierung der Beamline Topographie an der Synchrotron-Strahlenquelle ANKA am Forschungszentrum Karlsruhe

Betreuung und Optimierung der Beamline Topographie an der Synchrotron-Strahlenquelle ANKA am Forschungszentrum Karlsruhe

Weitere Informationen: http://www.krist.uni-freiburg.de
Ansprechpartner: Dr. A. N. Danilewsky
Tel: 0761-203-6450
Email: a.danilewsky@krist.uni-freiburg.de

Projektbeginn: 2003
Projektende: (unbegrenzt)

Danilewsky A N

Albert-Ludwigs-Universität Freiburg
Professur für Kristallographie
Prof. Dr. Arne Cröll
Hermann-Herder-Str. 5
79104 Freiburg

Telefon: 203-6439
Fax: 203-6434
Email: arne.croell@krist.uni-freiburg.de
http://www.krist.uni-freiburg.de/ki/Mitarbeiter/Leitung.php

Prof. Dr. T. Baumbach IInstitute for Photon Science and Synchrotron Radiation (IPS) Karlsruhe Institute of Technology, KIT

• Forschungszentrum Karlsruhe, Bund

white beam, X-ray topography, in-situ characterisation

• Asadchikov V. E., A.V. Buzmakov, F. Chukhovskii, I. Dychkova, D.A. Zolotov, A. N. Danilewsky, T. Baumbach, S. Bode, S. Haaga, D. Hänschke, M. Kabukcuoglu, M. Balzer, M. Caselle, E. Suvorov: X-ray topo-tomography studies of linear dislocations in silicon single crystals J Appl Crystallogr, 2018; 51 (6): 1-7.
• Baumbach T., Hänschke D., Helfen L., Hamann E., Farago T., Bode S., Haaga S., Kabukcuoglu M., Danilewsky A. N.: 3D Material Characterization by Laminographic Imaging: Status and Prospects 2018; Abstracts: 192 (German Conference for Research with Synchrotron Radiation, Neutrons and Ion Beams at Large Facilities, SNI 2018, Garching, Sept. 17th-19th,).
• Bode, S., Hänschke, D., Haaga, S., Kabukcuoglu, M., Hamann, E., Helfen, L., Danilewsky, A. N., Baumbach, T., Cowan, T.: Enabling Quasi 4D Imaging of Dislocation Dynamics in Semiconductor Wafers by X-Ray Diffraction Laminography 2018; Abstracts: 169 (14th Biennial Conference on High-Resolution X-Ray Diffraction and Imaging, XTOP 2018, Bari, Italy, 3rd -7th Sept.).
• Bode S., Hänschke D., Hamann E., Kabukcuoglu M., Haaga S., Helfen L., Danilewsky A. N., Baumbach T.: Extension of X-Ray Diffraciton Laminography: A 4D Imaging Method for the Investigation of Defect Dynamics in Crystalline Materials Abstracts, 2018; Posterpreis (26th Annual Meeting of the German Crystallographic Society (DGK) 2018, Essen, Germany, March 5-8, 2018).
• Fritsch P., Kabukcuoglu M. P., Haaga S., Baumbach T., Danilewsky A. N.: In-situ Observation of Dislocations in GaAs during Annealing Process by Means of Synchrotron White Beam X-ray Topography Abstracts, 2018: 50 (1st German-Austrian Conference on Crystal Growth (GACCG/DKT2018), Vienna, Austria, Feb. 14-16 2018).
• Fritsch P., Kabukcuoglu M. P., Haaga S., Baumbach T., Danilewsky A. N.: In situ Studies of Dislocations in GaAs with Synchrotron White Beam X-ray Topography Abstracts, 2018 (26th Annual Meeting of the German Crystallographic Society (DGK) 2018, Essen, Germany, March 5-8, 2018).
• Grenzer, J., Olbinado, M., Rack, A., Danilewsky, A. N., Cowan, T.: Ultra-high-speed X-ray imaging of laser-driven shock into solid materials using synchrotron light 2018; Abstracts: 13 (German Conference for Research with Synchrotron Radiation, Neutrons and Ion Beams at Large Facilities, SNI 2018, Garching, Sept. 17th-19th,).
• Grenzer, J., Rack, A., Olbinado, M. P., De Resseguier, T., Danilewsky, A. N., Kraus, D., Cowan, T.: Ultra-High-Speed X-Ray Imaging of Laser Driven Processes Using Synchrotron Light 2018; Abstracts: 27 (14th Biennial Conference on High-Resolution X-Ray Diffraction and Imaging, XTOP 2018, Bari, Italy, 3rd -7th Sept.).
• Haaga, S., Hänschke, D., Bode, S., Kabukcuoglu, M., Hamann, E., Helfen, L., Roder, M., Hurst, M., Baumbach, T., Danilewsky, A. N.: 3D Imaging of Crystalline Defects in Various Semiconducting Materials by X-Ray Diffraction Laminograpy 2018; Abstracts: 38 (14th Biennial Conference on High-Resolution X-Ray Diffraction and Imaging, XTOP 2018, Bari, Italy, 3rd -7th Sept.).
• Haaga S., Hänschke D., Hamann E., Kabukcuoglu M., Bode S., Helfen L., Baumbach T., Danilewsky A. N.: 3D Imaging of Crystalline Defects in High Absorbing Semiconductor Materials with X-Ray Diffraction Laminography (XDL) on the Example of GaAs Wafers 2018 (26th Annual Meeting of the German Crystallographic Society (DGK) 2018, Essen, Germany, March 5-8, 2018).
• Hänschke, D., Bode, S., Kabukcuoglu, M., Haaga, S., Hamann, E., Helfen, L., Danilewsky, A. N., Baumbach, T., Baumbach, T., Danilewsky, A. N.: 3D Characterisation of Crystal Defects by X-Ray Diffraction Laminograpy: Status and Prospects 2018; Abstracts: 163 (14th Biennial Conference on High-Resolution X-Ray Diffraction and Imaging, XTOP 2018, Bari, Italy, 3rd -7th Sept.).
• Jauß T., Danilewsky A. N., Sorgenfrei T., Reimann C., Friedrich J.: Synchrotron White Beam X-ray Topography Investigation of Particle Incorporation in Silicon Abstracts, 2018: 18 (1st German-Austrian Conference on Crystal Growth (GACCG/DKT2018), Vienna, Austria, Feb. 14-16 2018).
• Kabukcuoglu, M., Hänschke, D., Bode, S., Haaga, S., Hamann, E., Helfen, L., Baumbach, T., Danilewsky, A. N.: Investigating Dislocation Dynamics in Silicon Wafers by Means of X-Ray Diffraction Laminograpy 2018; Abstracts: 41 (14th Biennial Conference on High-Resolution X-Ray Diffraction and Imaging, XTOP 2018, Bari, Italy, 3rd -7th Sept.).
• Kabukcuoglu M., Hänschke D., Hamann E., Bode S., Haaga S., Helfen L., Baumbach T., Danilewsky A. N.: 4D Investigation of the Dislocation Propagation and their Interaction Depending on Thermal Stress by Means of X-ray Diffraction Laminography Abstracts, 2018; Posterpreis (26th Annual Meeting of the German Crystallographic Society (DGK) 2018, Essen, Germany, March 5-8, 2018).
• Kirste L., Tran Thi T. N., Danilewsky A. N., Sochacki T., Bockowski M., Baruchel J.: Defect Structure Analysis of GaN Substrates: From Laboratory to Synchrotron X-Ray Diffraction Techniques 2018: 129 (14th Biennial Conference on High-Resolution X-Ray Diffraction and Imaging, XTOP 2018, Bari, Italy, 3rd -7th Sept.).
• Roder, M., Wellmann, P., Arzig, S., Danilewsky, A. N.: Characterization of defects and strain with Synchrotron White Beam X-ray Topography (SWXRT) and High Resolution X-ray Diffractometry (HRXRD) in 4H-SiC 2018; Abstracts: 49 (14th Biennial Conference on High-Resolution X-Ray Diffraction and Imaging, XTOP 2018, Bari, Italy, 3rd -7th Sept.).
• Roder M., Arzig M., Steiner J., Wellmann P., Danilewsky A. N.: Characterisation of 4H-SiC 2018 (DGKK-Arbeitskreis „Massive Halbleiterkristalle“).
• Roder M., Danilewsky A. N., Wellmann P.: Defect and Strain Characterization of 4H-SiC Abstracts, 2018 (26th Annual Meeting of the German Crystallographic Society (DGK) 2018, Essen, Germany, March 5-8, 2018).
• Tanner B., Allen D., Wittge J., Danilewsky A. N., Garagorri J., Gorostegui-Colinas E., Elizalde M. R, McNally P. J.: Quantitative Imaging of the Stress/Strain Fields and Generation of Macroscopic Cracks from Indents in Silicon In: Crystal Indentation Hardness Basel, Beijing, Wuhan, Barcelona, Belgrad: MDPI; under CC BY-NC-ND license, 2018; 178-190 (Crystals). (download: https://doi.org/10.3390/books978-3-03842-968-5)
• Tanner B., Danilewsky A. N., Rotary B., Vijayaraghavan R. K., McNally P. J.: Non-destructive X-ray diffraction measurement of warpage in silicon die embedded in integrated circuit packages 2018; Abstracts: 195 (14th Biennial Conference on High-Resolution X-Ray Diffraction and Imaging, XTOP 2018, Bari, Italy, 3rd -7th Sept.).
• Danilewsky A. N., Rack A., Scheel M.: Dislocation and crack dynamics in silicon analyzed by X-ray diffraction imaging Abstracts, 2017 (TOPICAL DAY: Imaging and Image Analysis IX, Empa, Dübendorf, Schweiz).
• Dubs C., Surzhenko O., Linke R., Danilewsky A., Brückner U., Dellith J.: Sub-micrometer yttrium iron garnet LPE flms with low ferromagnetic resonance losses J Phys D Appl Phys, 2017; 50: 204005-(7pp). : https://doi.org/10.1088/1361-6463/aa6b1c
• Gorji N. E., Tanner B. K., Vijayaraghavan R. K., Danilewsky A. N., McNally P. J.: Nondestructive, in situ mapping of die surface displacements in encapsulated IC chip packages using x-ray diffraction imaging techniques 2017 (67th Electronic Components and Technology Conference, ECTC 67, Lake Buena Vista, Florid, USA, May 30 - June 2).
• Hänschke D., Danilewsky A., Hamann E., Bode S., Helfen L., Baumbach T.: Correlated 3D Imaging of Dislocations: Insight into the Onset of Thermal Slip in Semiconductor Wafers Z Krist-cryst Mater, 2017 Suppl. 37: 10 (25. Jahrestagung Deutsche Gesellschaft für Kristallographie 2017, Karlsruhe, 27. - 30. 2017).
• Hänschke D., Danilewsky A. N., Helfen L., Hamann E., Baumbach T.: Correlated Three-Dimensional Imaging of Dislocations: Insight into the Onset of Thermal Slip in Semiconductor Wafers Phys Rev Lett, 2017; 119: 215504. : https://doi.org/10.1103/PhysRevLett.119.215504
• Sorgenfrei T., Hess A., Zähringer J., Danilewsky A. N., Cröll A., Egorov A., Senchenkov A.: Growth of Ga-Doped Ge Crystals under µg and 1g to Investigate the Influence of Different Convection Types International Journal of Microgravity Science and Application, 2017; 34 (1): 340116-1- 340116-10. : http://dx.doi.org/10.15011//jasma.34.340116
• Tanner, B., Allen, D., Wittge J., Danilewsky A. N., Garagorri J., Gorostegui-Colinas E., Elizalde M. R, McNally P. J.: Quantitative Imaging of the Stress/Strain Fields and Generation of Macroscopic Cracks from Indents in Silicon Crystals, 2017; 7 (11): 347. : http://dx.doi.org/10.3390/cryst7110347
• Tanner B., Danilewsky A. N., Bose A., Vijayaraghavan R. K., Cowley A., McNally P. J.: Non-destructive X-ray diffraction measurement of warpage in silicon die embedded in integrated circuit packages J Appl Crystallogr, 2017; 50: 547-554. : https://doi.org/10.1107/S1600576717003132
• Asadchikov, V. E., Alexeev, P., Bessas, D., Buzmakov, A. V., Cecilia, A., Chumakov, A., Danilewsky, A. N., Deryabin, A. N., Härtwig, J., Hermann, R. P., Jafari, A., Kanevsky, V. M., Prokhorov, I. A., Roshchin, B. S., Sergueev, I., Wille, H. C.: Growth of single crystal sapphire for applications in X-ray backscattering 2016: Fr1-T06-3 (18th International Conference on Crystal Growth and Epitaxy, ICCGE-18, Nagoya, Japan, Aug. 7-12).
• Asadchikov V. E., Butashin, A.V., Buzmakov, A.V., Deryabin, A.N., Kanevsky, V.M., Prokhorov, I. A., Roshchin, B. S., Volkov, Yu. O., Zolotov, D. A., Jafari, P., Alexeev, P., Cecilia, A., Baumbach, T., Bessas, D., Danilewsky, A. N., Sergueev, I., Wille H. C., Hermann, H. P.: Single-crystal sapphire microstructure for high-resolution synchrotron x-ray monochromators Cryst Res Technol, 2016; 1-9 (4): 290-298. (download: http://dx.doi.org/10.1002/crat.201500343)
• Bose, A., R.K. Vijayaraghavan, A. Cowley, V. Cherman, O. Varela Pedreira, B.K. Tanner, A.N. Danilewsky, I. D. Wolf, P. J. McNally: Nondestructive Monitoring of Die Warpage in Encapsulated Chip Packages Ieee Transactions On Components Packaging And Manufacturing Technology, 2016; 6: 653-662. (download: http://dx.doi.org/10.1109/TCPMT.2016.2527060)
• Cowley A., Ivankovic A., Wong C. S., Bennet N. S., Danilewsky A.N., Gonzalez M., Cherman V., Vandevelde B., De Wolf I., McNally, P. J.: B-Spline X-Ray Diffraction Imaging — Rapid non-destructive measurement of die warpage in ball grid array packages Microelectron Reliab, 2016; 59: 108-116. : http://dx.doi.org/10.1016/j.microrel.2015.12.030
• Danilewsky A. N., Rack A., Scheel M.: Ultra High Speed In-Situ Characterisation of Defects in Single Crystals 2016: Th1-G09-4 (18th International Conference on Crystal Growth and Epitaxy, ICCGE-18, Nagoya, Japan, Aug. 7-12).
• Danilewsky A. N., Rack A., Scheel M.: Towards Real Time X-Ray Imaging of Cracks and Fracture in Silicon MATERIALS STRUCTURE in Chemistry, Biology, Physics and Technology, 2016; 23 (3): 210-211 (13th Biennial Conference on High-Resolution X-Ray Diffraction and Imaging, XTOP 2016, Brno, Czech Republic, Sept. 4 - 8).
• Fritsch P., Rießle K., Sorgenfrei T., Cröll A., Danilewsky A.: Growth and Characterization of Germanium from Tin-Solution Abstracts, 2016: 96 (1st German-Czechoslovak Conference on Crystal Growth (GCCCG-1), Dresden, March 16-18).
• Lankinen A., Tuomi T., Kostamo P., Jussila H., Sintonen S., Lipsanen H., Tilli M., Mäkinen J., Danilewsky A. N.: Synchrotron X-Ray Diffraction Topography Study of Bonding-Induced Strain in Silicon-on-Insulator Wafers Thin Solid Films, 2016; 603: 435-440. (download: http://dx.doi.org/10.1016/j.tsf.2016.02.052)
• McNally P. J., B.K. Tanner, A.N. Danilewsky, N. Gorgi, Bose A., R.K. Vijayaraghavan, A. Cowley, V. Cherman, O. Varela Pedreira, I. De Wolf: X-ray diffraction imaging for real-time in situ monitoring of future 3-D photonics system packages 2016; Abstracts: 2014 (7th International Conference on Optical, Optoelectronic and Photonic Materials and Applications, ICOOPMA, Montreal, Canada, June 12-17).
• Rack A., Scheel M., Danilewsky A. N.: Real-time direct and diffraction X-ray imaging of irregular silicon wafer break-age IUCrJ, 2016; 3 (2): 108-114. : http://dx.doi.org/10.1107/S205225251502271X
• Sintonen, S., Suihkonen, S, Irmscher, K., Schulz, T., Danilewsky, A. N., Tuomi, T., Stankiewicz, R., Albrecht, M.: On the impurity incorporation evolution during growth of ammonothermal GaN Abstracts, 2016: 100 (1st German-Czechoslovak Conference on Crystal Growth (GCCCG-1), Dresden, March 16-18).
• Sintonen, S., Wahl, S., Richter, S., Meyer, S., Suihkonen, S., Schulz T., Irmscher K., Danilewsky A., Tuomi T., Stankiewicz R., Albrecht M.: Evolution of impurity incorporation during ammonothermal growth of GaN J Cryst Growth, 2016; 456: 51-57. : http://dx.doi.org/10.1016/j.jcrysgro.2016.08.044
• Sorgenfrei, T., Hess A., Zähringer J., Danilewsky A., Cröll A., Egorov A., Senchenkov A.: Growth of doped Ge crystals under µg and 1g conditions to determine the influence of different melt convection state Abstracts, 2016: 67 (1st German-Czechoslovak Conference on Crystal Growth (GCCCG-1), Dresden, March 16-18).
• Tanner B., Danilewsky A. N., Bose A., Vijayaraghavan R. K., Cowley A., Cherman V., McNally P. J.: Non-destructive X-ray diffraction measurement of warpage in silicon die embedded in integrated circuit packages MATERIALS STRUCTURE in Chemistry, Biology, Physics and Technology, 2016; 23 (3): 211-212 (13th Biennial Conference on High-Resolution X-Ray Diffraction and Imaging, XTOP 2016, Brno, Czech Republic, Sept. 4 - 8).
• Tanner B., Garagorri J., Gorostegui-Colinas E., Elizalde M.R., Allen D., McNally P., Wittge J., Ehlers C., Danilewsky A. N.: X-ray Asterism and the Structure of Cracks from Indentations in Silicon J Appl Crystallogr, 2016: 250-259. (download: http://dx.doi.org/10.1107/S1600576715024620)
• Weit, S., Sorgenfrei, T., Cröll A., Danilewsky A.: Growth of bulk crystals in the germanium-silicon system (Poster Preis) Abstracts, 2016: 95 (1st German-Czechoslovak Conference on Crystal Growth (GCCCG-1), Dresden, March 16-18).
• Alexeev P., Asadchikow V., Bessas D., Butashin A. V., Buzmakov A. V., Cecilia A., Cuhumakov A., Danilewsky A. N., Deryabin A., Härtwig J., Hermann R., Jafari A., Muslimov A. E., Prokhorov I. A., Roschin B. S., Sergueev I., Stankov S., Wille H.: Sapphire for high-resolution X-ray optics: detailed microstructure Abstracts, 2014: 69 (12th Biennal Conf. on High Resolution X-Ray Diffraction and Imaging, XTOP 2014, Villards de Lans, France, Sept. 14th - 19th 2014).
• Danilewsky A., Wittge J., Allen D., Stopford J., McNally P., Baumbach T.: Progress in white beam diffraction imaging New J Phys, 2014; 4: 309 (DPG-Frühjahrstagung der Sektion Kondensierte Materie (SKM), Dresden, 30.03.-04.04.2014).
• Danilewsky A. N., Kiefl K.: In-situ study of dislocations in GaAs by X-ray diffraction imaging Abstracts, 2014: 21 (12th Biennal Conf. on High Resolution X-Ray Diffraction and Imaging, XTOP 2014, Villards de Lans, France, Sept. 14th - 19th 2014).
• Jafari A., Cecilia, A., Härtwig, J., Danilewsky A., Bessas, D., Asadchikov V., Roschin B., Zolotov D., Deryabin A., Seergev I., Stankov S., Baumbach T., Alexeev P., Wille H.-Ch., Hermann R.: White beam synchrotron x-ray topography of sapphire single crystals New J Phys, 2014 Suppl. 49,4: 311 (DPG-Frühjahrstagung der Sektion Kondensierte Materie (SKM), Dresden, 30.03.-04.04.2014).
• Oriwol D., Danilewsky A. N., Sylla L., Seifert W., Kittler M., Leipner S.: Quantifizierung und elektrische Evaluierung von Versetzungsstrukturen in multikristallinem Silicium  Abstracts, 2014: 65 (Deutsche Kristallzüchtungstagung 2014, Halle (Saale) 12. - 14. März).
• Sintonen S., Rudzinski M., Suihkonen S., Jussila H., Knetzger M., Meissner E., Danilewsky A., Tuomi T., Lipsanen H.: Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN J Appl Phys, 2014; 116 (8): 083504. : http://dx.doi.org/10.1063/1.4893901
• Sintonen S., Suihkonen S., Jussila H., Danilewsky A., Stankiewicz R., Tuomi T., Lipsanen H.: Large-area analysis of dislocations in ammonothermal GaN by synchrotron radiation X-ray topography Appl Phys Express, 2014; 7 (9): 091003. : http://dx.doi.org/10.7567/APEX.7.091003
• Tanner, B., Garagorri, J., Wittge J., Danilewsky A. N., Allen D., McNally P., Gorostegui E., Elizalde M. R.: X-ray asterism and structure of cracks from indentation in silicon Abstracts, 2014: 60 (12th Biennal Conf. on High Resolution X-Ray Diffraction and Imaging, XTOP 2014, Villards de Lans, France, Sept. 14th - 19th 2014).
• Wong C.S., Ivankovic A., Cowley A., Benett N., Danilewsky A. N., Gonzalez M., Cherman V., Vandevelde B., De Wolf I., McNally P. J.: Development of B-spline x-ray diffraction imaging techniques for die warpage and stress monitoring inside fully encapsulated packaged chips Abstracts, 2014 (IEEE Electronic Components and Technology Conference, ECTC 64, 2014, Lake Buena Vista, FL USA, May 27-30).
• Wong C. S., Bennett N. S., Manessis D., Danilewsky A., McNally P. J.: Non-Destructive Laboratory-Based X-Ray Diffraction Mapping of Warpage in Si Dies Embedded in IC Packages Microelectron Eng, 2014; 117: 48-56.
• Carl E. R., Danilewsky A., Geiger T., Meißner E.: Investigation of grain boundaries in multi-crystalline silicon Z Kristallogr, 2013 (21st Annual Conference of the German Crystallographic Society, Freiberg (Sachsen), March 19-22). (in Druck)
• Carl E.-R., Danilewsky A., Cröll A., Geiger T., Meissner E.: Grain and Subgrain Boundaries in Multi-Crystalline Silicon 2013: 195-196 (17th International Conference on Crystal Growth and Epitaxy, ICCGE-17, Warsaw, Poland, Aug. 11-16).
• Danilewsky A., Wittge, J., Kiefl, K., Allen, D., McNally, P., Garagorri, G., Elizalde, M. R., Baumbach, T., Tanner, B.: Crack propagation and fracture in silicon wafers under thermal stress J Appl Crystallogr, 2013; 46 (4): 849-855. (download: http://dx.doi.org/10.1107/S0021889813003695)
• Danilewsky A. N.: In-situ Beobachtungen zur Versetzungsmobilität 2013 (Fraunhofer - Centrum für Silizium Photovoltaik CSP, Halle, 30.04.2013).
• Kallinger B., Polster S., Berwian P., Friedrich J., Danilewsky A. N.: Experimental verification of the model by Klapper for 4H-SiC homoepitaxy on vicinal substrates J Appl Phys, 2013; 114 (18): 183507-1-8.
• Kiefl K., Jauß T., Danilewsky A. N., Cröll A.: Defektanalyse an Siliziumwafer-Proben mit Hilfe von Polarisations-Infrarotmikroskopie Abstracts, 2013: 53 (Deutsche Kristallzüchtungstagung 2013, Erlangen 06. - 08. März).
• Oriwol, D., Carl E. R., Danilewsky A. N., Sylla L., Seifert W., Kittler M., Leipner H. S.: The Formation of Subgrain Boundaries During Block-Casting of Multicrystalline Silicon studied by Synchrotron X-Ray Topography  2013 (15th Summer School on Crystal Growth - ISSCG-15, Gdansk, Poland, August 4-10).
• Oriwol, D., Carl E.-R., Danilewsky A. N., Sylla L., Seifert W., Kittler M., Leipner H. S.: Small-angle Subgrain Boundaries Emanating from Dislocation Pile-Ups in Multicrystalline Silicon Studied with Synchrotron White Beam X-Ray Topography Acta Mater, 2013; 61: 6903-6910.
• Oriwol D., Danilewsky A. N., Sylla L., Leipner S.: Strukturelle Untersuchung von Versetzungscluster in multikristallinem Silicium mittels Synchrotron-Röntgentopographie Abstracts, 2013: 82 (Deutsche Kristallzüchtungstagung 2013, Erlangen 06. - 08. März).
• Tanner B., Wittge J., Vagovic P., Baumbach T., Allen D., McNally P., Bytheway R., Jaques D., Fossati M., Bowen D. K., Garagorri J., Elizalde M. R., Danilewsky A. N.: X-Ray Diffraction Imaging for Predictive Metrology of Crack Probagation in 450mm Diameter Silicon Wafers Advances in X-Ray Analysis, 2013; 56: 1.
• Tanner B., Wittge J., Vagovic P., Baumbach T., Allen D., McNally P., Bytheway R., Jaques D., Fossati M., Bowen D. K., Garagorri J., Elizalde M. R., Danilewsky A. N.: X-Ray Diffraction Imaging for Predictive Metrology of Crack Probagation in 450mm Diameter Silicon Wafers Powder Diffr, 2013; 28 (2): 95-99.
• Cecilia A., Hamann E., Feyer J., Xu F., Helfen L., Haas C., Danilewsky A. N., Fauler A., Simon R., Baumbach T., Fiederle M.: Investigation of crystallographic and detection properties of CdTe at the ANKA synchrotron light source 2012 (NANO & MICRO Sciences and Technologies Workshop, Helmholtz Centre Berlin (HZB), BESSY II, Institute for Nanometre Optics and Technology, Berlin, March 22-23).
• Cröll A., Danilewsky A., Fiederle M., Hess A., Jauß T., Schumann M., Sorgenfrei T., Zähringer J.: Semiconductor Materials for photovoltaic and thermoelectric applications 2012 (Energy Conversion Workshop, University of Freiburg-Penn State University. Freiburg, July 12-14, 2012).
• Danilewsky A.: Synchrotron Topographie zur Charakterisierung von Defekten in Sililcium - Wafern 2012 (Institut für Kristallographie und Strukturphysik, Universität Erlangen - Nürnberg).
• Danilewsky A., Wittge J., Allen D., Stopford J., McNally P., Baumbach, T.: Progress in Laue Topography Z Kristallogr, 2012 Suppl. 32: 9 (Laue Day and 20th Annual Meeting of the German Crystallographix Society (DGK), München, Germany, March 12-15).
• Danilewsky A., Wittge J., Ehlers Ch., Kiefl K., Allen D., McNally P., Garagorri J., Elizalde M. R., Fossati M., Tanner B.: Cleavage, Microcrack Formation and Fracture in Silicon: In-situ X-ray Diffraction Imaging at High Temperature 2012: 55-56 (11th Biennial Conference on High Resolution X-Ray Diffraction and Imaging, XTOP 2012, St. Petersburg, Russia, Sept.15-20).
• Danilewsky A. N., Wittge J., Ehlers Ch., Jauß T., Cröll A., Allen D., McNally P., Garagorri J., Elizalde-Gonzales R. M., Fossati M. C., Tanner B.: Cleavage, Microcrack Formation and Fracture in Silicon: In-situ Study at High Temperature Abstracts, 2012: O22 (Deutsche Kristallzüchtungstagung, Freiberg, 7. - 9. März).
• Danilewsky A. N., Wittge J., Garagorri J., Elizalde M. R., Allen D., McNally P., Tanner B., Vagovic P., Baumbach T.: In Situ Diffraction Imaging: Dislocation and Crack Dynamics in Nanoindented Silicon (invited) 2012 (XI Int. Conf. on Nanostructured Materials, NANO 2012, Aug. 26-31, Rhodes, Greece).
• Hänschke D., Helfen L., Altapova V., Danilewsky A. N., Baumbach T.: Three-dimensional imaging of dislocations by X-ray diffraction laminography Appl Phys Lett, 2012; 101 (24): 4103. : http://dx.doi.org/10.1063/1.4769988
• Hänschke D., Helfen L., Altapova V., Moosmann J., Hamann E., Wittge J., Danilewsky A., Baumbach T.: Diffraction laminography applied to 3-dimensional imaging of dislocation networks in silicon wafers 2012: 59-60 (11th Biennial Conference on High Resolution X-Ray Diffraction and Imaging, XTOP 2012, St. Petersburg, Russia, Sept.15-20).
• Hänschke D., Helfen L., Altapova V., Moosmann J., Hamann E., Wittge J., Danilewsky A., Baumbach T.: 3-Dimensional Imaging of Dislocations in Silicon Wafers by Diffraction Laminography 2012; WE-S-P-60 (11th International Conference on Synchrotron Radiation Instrumentation (SRI 2012), Lyon, France, July 9-13).
• Jauß T., Danilewsky A., Wittge J., Cröll A., Garagorri J., Elizalde R. M., Allen D., McNally P. J.: Influence of Mechanical Defects on the Crystal Lattice of Silicon Cryst Res Technol, 2012; 47 (3): 252-260. : http://dx.doi.org/10.1002/crat.201100488
• Jauß T., Danilewsky A., Wittge J., Cröll A., Garagorri J., Elizalde R. M., Allen D., McNally P., Baumbach, T.: Influence of mechanical defects on the crystal lattice of silicon Z Kristallogr, 2012 Suppl. 32: 61 (Laue Day and 20th Annual Meeting of the German Crystallographix Society (DGK), München, Germany, March 12-15).
• Jauß T., Danilewsky A. N., Wittge J., Cröll A., Garagorri J., Elizalde R. M., Allen D., McNally P.: Influence of mechanical defects on the crystal lattice of silicon Abstracts, 2012: P11 (Deutsche Kristallzüchtungstagung, Freiberg, 7. - 9. März).
• Kirste L., Danilewsky A., Schade L., Schwarz U. T., McNally P.: Analysis of the Defect Structure of Freestanding HVPE-GaN Substrates by Synchrotron White-Beam X-Ray Topography 2012: 130-131 (11th Biennial Conference on High Resolution X-Ray Diffraction and Imaging, XTOP 2012, St. Petersburg, Russia, Sept.15-20).
• Stopford J., Allena D., Aldriana O., Morshed M., Wittge J., Danilewsky A. N., McNally P. J.: Three dimensionial surface modelling: a novel analysis technique for non-destructive x-ray diffraction imaging of semiconductor die warpage & strain in fully encapsulated integrated circuits Cornell University Library, 2012; Condensed Matter (online). : http://arxiv.org/abs/1204.1466
• Tanner B., Danilewsky A., Wittge J., Garagorri J., Elizalde M. R., Allen D., McNally P., Fossati M., Jaques D.: X-ray Diffraction Imaging for Prediction of the Propagation Probability of Individual Cracks in Brittle Single Crystal Materials 2012: 53-54 (11th Biennial Conference on High Resolution X-Ray Diffraction and Imaging, XTOP 2012, St. Petersburg, Russia, Sept.15-20).
• Tanner B., Fossati M., Garagorri J., Elizalde M. R., Allen D., McNally P., Jaques D., Wittge J., Danilewsky A. N.: Prediction of the Propagation Probability of Individual Cracks in Brittle Single Crystal Materials Appl Phys Lett, 2012; 101 (4): 041903-1-041903-4. : http://link.aip.org/link/doi/10.1063/1.4738994
• Ullrich H.-J., Däbritz S., Langer E., Bauch J., Danilewsky A., Paufler P.: The discovery of X-ray interferences, the role of characteristic radiation therein and potential applications of the Laue method in modern engineering (invited) Verhandlungen der Deutschen Physikalischen Gesellschaft, 2012: KR 6.1 (76. Jahrestagung der DPG und DPG-Frühjahrstagung, Berlin, 25.-30. März). : http://www.dpg-verhandlungen.de/year/2012/conference/berlin/part/kr/session/6/contribution/1
• Allen D., Stopford J., Wittge J., Fossati M., Garagorri J., Gorostegui-Colinas E., McNally P., Danilewsky A. N., Bowen D. K., Tanner B., Elizalde M. R., Jaques D., Bytheway R.: Three Dimensional X-Ray Diffraction Imaging of Slip Bands in Silicon 2011 (European Materials Research Conference E-MRS Spring Meeting, May 9 - 13).
• Allen D., Wittge J., Stopford J., Danilewsky A. N., McNally P.: Three Dimensional X-Ray Diffraction Imaging Process - Induced Dislocation Loops in Silicon J Appl Crystallogr, 2011; 44: 526-531.
• Cecilia A., Hamann H., Haas C., Greiffenberg D., Danilewsky A. N., Hänscke D., Fauler A., Zwerger A., Buth G., Vagovic P., Baumbach T., Fiederle M.: Investigation of the crystallographic and detection properties of the CdTe at the ANKA synchrotron light source J Instrum, 2011 (International Workshop on Radiation Imaging Detectors, iWoRID 2011, July 3-7, Zürich, Swizerland). (in Druck)
• Danilewsky A.: Solution Growth and in-situ Characterisation of Dislocations in Semiconductor Crystals 2011 (ESRF, Grenoble, France 25.02.).
• Danilewsky A., Wittge J., Allen D., McNally P., Hänschke D., Baumbach T., Garagorri, J., Elizalde M. R.: Dislocations and slip band formation in silicon 2011 (DGKK-Workshop Kinetik, Clausthal-Zellerfeld, , 31. März - 1. April).
• Danilewsky A., Wittge J., Croell A., Rack A., Allen D., McNally P., dos Santos Rolo T., Vagovic P., Baumbach T., Garagorri, J., Elizalde M. R., Tanner B.: In-situ Diffraction Imaging Study of Dislocation Dynamics in Silicon 2011 (German Polish Conference on Crystal Growth - GPCCG 2011, Frankfurt/Oder, March 14th - 18th).
• Danilewsky A., Wittge J., Cröll A., Allen D., McNally P., Vagovic P., dos Santos Rolo T., Li Z., Baumbach T., Gorostegui-Colinas E., Garagorri J., Elizalde M. R., Fossati M., Bowen D. K., Tanner B.: Dislocation Dynamics and Slip Band Formation in Silicon: In Situ Study by X-ray Diffraction Imaging J Cryst Growth, 2011; 318 (1): 1157-1163. : http://dx.doi.org/10.1016/j.jcrysgro.2010.10.199
• Danilewsky A., Wittge J., Hess A., Cröll A., Rack A., dos Santos Rolo T., Allen D., McNally P., Vagovic P., Li Z., Baumbach T., Gorostegui-Colinas E., Garagorri J., Elizalde M. R., Jacques D., Fossati M., Bowen D. K., Tanner B.: Real time X-ray diffraction imaging for wafer metrology and high temperature in-situ experiments Phys Status Solidi A, 2011; 208 (11): 2499-2504. : http://dx.doi.org/10.1002/pssa.201184264
• Danilewsky A., Wittge J., Rack A., Allen D., McNally P., dos Santos Rolo T., Vagovic P., Baumbach T., Garagorri J., Elizalde M. R., Tanner B.: High Speed and in-situ Diffraction Imaging of Dislocations in Silicon with Laboratory and Synchrotron X-Ray Sources 2011 (European Materials Research Conference E-MRS Spring Meeting, May 9 - 13).
• Danilewsky A., Wittge J., Rack A., Allen D., McNally P., dos Santos Rolo T., Vagovic P., Baumbach T., Garagorri J., Elizalde M. R., Tanner, B.: In-situ and real time observation of defects in silicon (invited) 2011 (Int. Conf. on Materials for Advanced Technologie, ICMAT 2011, HH: Advanced Materials Supported by Synchrotron Radiation, Singapore, 26. June - 1. July).
• Hahne M., Bauer B., Fritton M., Danilewsky A., Gille P.: Single crystal growth and synchrotron topography of Al13Fe4 2011 (German Polish Conference on Crystal Growth - GPCCG 2011, Frankfurt/Oder, March 14th - 18th).
• Jauß T., Wittge J., Danilewsky A., Croell A., Garagorri, J., Elizalde M. R., Allen D., McNally P.: Influence of mechanical defects on the lattice of silicon 2011 (German Polish Conference on Crystal Growth - GPCCG 2011, Frankfurt/Oder, March 14th - 18th).
• Jauß T., Wittge J., Ehlers C., Kiefl C., Danilewsky A., Cröll A., Allen D., McNally P., Garagorri J., Elizalde M. R., Tanner B.: Microcracks, dislocations and slip bands in silicon Z Kristallogr, 2011: P22-P07 (Crystals, Minerals and Materials: Joint Meeting of the 19th Annual Meeting DGK, 89th DMG, MinPet 2011, Salzburg, Austria, 20-24 Sept.). (in Druck)
• Kallinger B., Polster S., Berwian P., Friedrich J., Müller G., Danilewsky A. N., Wehrhahn A., Weber A.-D.: Threading Dislocations in n- and p-type 4H-SiC Material analyzed by Etching and Synchrotron X-Ray Topography J Cryst Growth, 2011; 314 (1): 21-29.
• Ottinger J., Mühlberg M., Burianek M., Tonn J., Wittge J., Danilewsky A.: Selected physical and crystallographic properties of Mullite-type Bi2(Ga,Al)4O9 2011 (German Polish Conference on Crystal Growth - GPCCG 2011, Frankfurt/Oder, March 14th - 18th).
• Stopford, J., Allena, D., Aldriana, O., Morshed, M., Wittge, J., Danilewsky, A. N., McNally, P. J.: Combined use of three-dimensional X-ray diffraction imaging and micro-Raman spectroscopy for the non-destructive evaluation of plasma arc induced damage on silicon wafers Microelectron Eng, 2011; 88: 64-71. : http://dx.doi.org/10.1016/j.mee.2010.08.022
• Stopford J., Henry, A., Allen, D., Aldrian, O., Manessis, D., Benett, N., Morshed, M., Horan, K., Wittge J., Danilewsky A., Cowley A., McNally P.: Novel Applications of X-Ray Diffraction Imaging (XRDI) in the Non-Destructive Imaging of strain and Defects in Semiconductors (invited) 2011 (Int. Conf. on Materials for Advanced Technologie, ICMAT 2011, MM: Industry Workshop on Applied Surface Engineering, Singapore, 26. June - 1. July). (in Druck)
• Tanner B., Wittge J., Allen D., Fossati M. C., Danilewsky A. N., McNally P., Garagorri J., Elizalde M. R., Jaques D.: Thermal Slip Sources at the Extremity and Bevel Edge of Silicon Wafers J Appl Crystallogr, 2011; 44: 526-531.
• Cecilia A., Rack A., Douissard P.-A., Martin T., Couchaud M., Danilewsky A., Wittge A., Hess A., Dupré K., Wesemann V., Vagovic P., Simon R., Baumbach T.: Liquid Phase Epitaxial grown LSO:Tb scintillator filmsfor high resolution X-ray imaging applications Abstract, 2010; P21 (Deutsche Kristallzüchtunggstagung 2010, Freiburg, 3.-5. März). : http://www.dgkk.de/2010/abstract2010_s.pdf
• Danilewsky A.: In-situ Diffraction Imaging for Silicon Wafer Metrology at the Synchrotron Light Source ANKA, KIT Karlsruhe, Germany 2010 (Beijing Synchrotron Radiation Laboratory (BSRF), Institute of High Energy Physics).
• Danilewsky A., Wittge, J., Hess, A., Cröll A., Allen, D., McNally, P., Vagovice, P., Cecilia, A., Li, Z., Baumbach, T., Gorostegui-Colinas, E., Elizalde, M. R.: Dislocation Generation Related to Microcracks in Si-Wafers: High Temperature In Situ Study with White Beam X-Ray Topography Nucl Instrum Meth B, 2010; 268 (3-4): 399-402. : http://dx.doi.org/10.1016/j.nimb.2009.09.013
• Danilewsky A., Wittge A., Cröll A., Allen D., McNally P., dos Santos Rolo T., Cecilia A., Li Z., Baumbach T., Gorostegui–Colinas E., Garagorri J., Elizalde M. R., Fossati M. C., Bowen D. K., Tanner B. K.: In Situ Observation of Dislocation Dynamics at the TOPO-TOMO Beamline at the Synchrotron Light Source ANKA New J Phys, 2010; MM48.4: 525 (Spring Meeting of the Deutsche Physikalische Gesellschaft (DPG)).
• Ehlers Ch., Wittge A., Jauß T., Danilewsky A., Cröll A., Gorostegui–Colinas E., Garagorri J., Elizalde M. R.: Cleavage, Breakage and Microcrack Formation in Silicon Single Crystals Abstract, 2010; P20 (Deutsche Kristallzüchtunggstagung 2010, Freiburg, 3.-5. März). : http://www.dgkk.de/2010/abstract2010_s.pdf
• Li Z., Danilewsky A., Baumbach T., Cröll A., Wittge A., Allen D., McNally P., Vagovic P., Hänschke D., Gorostegui–Colinas E., Garagorri J., Elizalde M. R., Fossati M. C., Bowen D. K., Tanner B. K.: Investigation of Nanoindents on Silicon wafers by Full Field X Ray Micro Diffraction Imaging Abstract, 2010; P19 (Deutsche Kristallzüchtunggstagung 2010, Freiburg, 3.-5. März). : http://www.dgkk.de/2010/abstract2010_s.pdf
• Wittge A., Danilewsky A., Allen D., McNally P., Li Z., Baumbach T., Gorostegui-Colinas E., Garagorri J., Elizalde M. R., Jaques D., Fossati M. C., Bowen D. K., Tanner B.: X-Ray Diffraction Imaging of Dislocation Generation Related to Microcracks in Si-Wafers Powder Diffr, 2010; 25 (2): 99-103. : http://dx.doi.org/10.1154/1.3392369
• Wittge A., Danilewsky A., Cröll A., Allen D., McNally P., dos Santos Rolo T., Cecilia A., Li Z., Baumbach T., Gorostegui–Colinas E., Garagorri J., Elizalde M. R., Fossati M. C., Bowen D. K., Tanner B. K.: In Situ Observation of Dislocation Dynamics at the TOPO-TOMO Beamline at the Synchrotron Light Source ANKA Abstract, 2010; O10 (Deutsche Kristallzüchtunggstagung 2010, Freiburg, 3.-5. März). : http://www.dgkk.de/2010/abstract2010_s.pdf
• Allen D., Wittge J., Zlotos A., Gorostegui-Colinas E., Garagorri J., McNally P., Danilewsky A., Elizalde M. R.: Observation of nano-indent induced strain fields and dislocation generation in Silicon wafers using Micro-Raman Spectroscopy and White Beam X-Ray Topography Nucl Instrum Meth B, 2009: in print. : http://doi:10.1016/j.nimb.2009.10.174
• D. Allen, J. Wittge, A. Zlotos, E. Gorostegui-Colinas, J. Garagorri, P. McNally, A. Danilewsky, M. R. Elizalde: Observation of nano-indent induced strain fields and dislocation generation in Silicon wafers using Micro-Raman Spectroscopy and White Beam X-Ray Topography Nucl Instrum Meth B, 2009 (E-MRS 2009 Spring Meeting, June 8-12, Strasbourg, France). (in Druck)
• Danilewsky, A., Wittge, J., Hess, A., Cröll, A., Allen, D., McNally, P., P. Vagovic, A. Cecilia, Z. Li, T. Baumbach, E. Gorostegui-Colinas, M. R. Elizalde,: Dislocation Generation Related to Microcracks in Si -Wafer: In -situ Study at High Temperature with White Beam X-Ray Topography Nucl Instrum Meth B, 2009 (E-MRS 2009 Spring Meeting, June 8 - 12, 2009, Strasbourg, France). (in Druck)
• Danilewsky A., Cröll A., Tonn, J., Schweizer, M., Lauer, S., Benz, K. W., Tuomi, T, Rantamäki, R., McNally, P., Curley, J.: Dislocations and Dislocation Reduction in Space Grown GaSb Cryst Res Technol, 2009; 44: 1109-1114. : http://dx.doi.org/10.1002/crat.200900468
• Danilewsky A. N., Wittge J., Zlotos A., Cröll A., Allen D., McNally P., Vagovic P., Cecilia A., Zhi Juan L., Baumbach T., Gorostegui-Colinas E., Elizalde M. R.: In-situ observation of Dislocations in Si at High Temperatures with White Beam X-Ray Topography Z Kristallogr, 2009 Suppl. 29: 137 (17. Jahrestagung der DGK).
• Hess A., Danilewsky A. N., Cröll A., Zhi Juan L., Vagovic P., Cecilia A., Dos Santos Rolo T., Allen D., McNally P.: Röntgentopographie an großen Si - Wafern 2009: 20 (Deutsche Kristallzüchtungstagung 2009, Dresden).
• Kallinger, B., Polster, S., Berwian, P., Danilewsky A., Wehrhahn, A., Weber, A.-D.: Comparative Study on the Dislocation Densities of 4H-SiC Substrates and Homoepitaxial Layers using Defect Selective Etching and Synchrotron White Beam X-Ray Topography J Electron Mater, 2009 (International Conference on Defects — Recognition, Imaging and Physics in Semiconductors (DRIP XIII),). (in Druck)
• Li Z., Helfen L., Danilewsky A. N., Baumbach T.: Rocking Curve Imaging of Rocking Curve Imaging of Silicon Wafer with Indent Array 2009 (2nd School and Workshop on X-Ray Micro and Nanoprobes (XMNP 2009), June 14th to 22nd , 2009, Salerno, Italy).
• Li Z., Helfen L., Danilewsky A. N., Mikulik P., Fomassati M., Xu F., Reischig P., Altapova V., Hänschke D., Buth G.: Analysis of Micro Devects and Dislocations in Silicon Wafer by X-Ray Rocking Curve Imaging Z Kristallogr, 2009 Suppl. 29: 139 (17. Jahrestagung der DGK).
• P. Kostamo, M. Shorohov, V. Gostilo, H. Sipilä, V. Kozlov, I. Lisitsky, M. Kuznetsov, A. Lankinen, A. N. Danilewsky, H. Lipsanen, M. Leskelä: Characterization of TlBr for X-ray and gamma-ray detector applications Nucl Instrum Meth A, 2009; 607 (1): 129-131. : http://dx.doi.org/10.1016/j.nima.2009.03.125
• Polster S., Kallinger B., Kirste L., Danilewsky A. N., Friedrich J., Wehrhahn A., Weber A.-D.: Untersuchung ders versetzungshaushaltes in 4H-SiC Substraten und homoepitaktischen Schichten mittels defektselektivem Ätzen und Synchrotron Weißlicht Röntgentopographie 2009: 44 (Deutsche Kristallzüchtungstagung 2009, Dresden).
• Rack A., Helfen L., Weitkamp T., Danilewsky A., Simon R., Lübbert D., Baumbach T.: Diffraction and Transmission Synchrotron Imaging at the German Light Source ANKA—Potential Industrial Applications AIP Conf. Proc. (AIP Conference Proceedings), 2009; 1099 (1): 878-881.
• Rack A., Weitkamp T., Bauer Trabelsi S., Modregger P., Cecilia A., dos Santos Rolo T., Rack T., Haas D., Simon R., Baumbach T., Heldele R., Schulz M., Mayzel B., Danilewsky A., Waterstradt T., Diete W., Riesemeier H., Müller B.R.: The micro-imaging station of the TopoTomo beamline at the ANKA synchrotron light source Nucl Instrum Meth B, 2009; 267 (11): 1978-1988. : http://dx.doi.org/10.1016/j.nimb.2009.04.002
• Wittge A., Danilewsky A., Allen D., McNally P., Li Z., Baumbach T., Gorostegui-Colinas E., Garagorri J., Elizalde M. R., Jaques D., Fossati M. C., Bowen D. K., Tanner B.: X-Ray Diffraction Imaging of Dislocation Generation Related to Microcracks in Si-Wafers Advances in X-Ray Analysis, 2009; 53 (58th Annual Conference on Applications of X-Ray Analysis, Denver X-Ray Conference, Denver, USA, July 27-31). (in Druck)
• Wittge J., Danilewsky a. N., Hess A., Cröll A., Allen D., McNally P., Vagovic P., Cecilia A., Zhi Juan L., Baumbach T., Gorostegui-Colinas E., Elizalde M. R.: Charakterisierung von definiert erzeugten Defekten in Si-Wafern 2009: 37 (Deutsche Kristallzüchtungstagung 2009, Dresden).
• Wittge J., Danilewsky A. N., Hess A., Cröll A., Allen D., McNally P., Vagovic P., dos Santos Rolo T., Cecilia A., Li Z., Baumbach T., Garagorri J., Gorostegui-Colinas E., Elizalde M. R, Jacques D., Fossati M.C., Bowen D.K., Tanner B. K.: Investigation of Si Wafer Damage in Manufacturing Processes: In Situ Study at High Temperature with White Beam X-Ray Topography 2009 (8th ANKA / KNMF USERS MEETING, Karlsruhe, Germany, October 8 - 9, 2009).
• Danilewsky A.: Characterisation of Defects in Semiconductor Crystals: single and poly crystalline 2008 (Institut für Kristallzüchtung, IKZ, Berlin, 15. Juli).
• Danilewsky A.: Charakterisierung von polykristallinem Silicium mittels Electron Back Scatter Diffraction (EBSD) und Synchrotron-Topographie (SXRT) 2008 (Gemeinsames Kolloquium zur Halbleitertechnologie und Messtechnik im Sommersemester 2008, Fraunhofer Institut für Integrierte Systeme und Bauelementetechnologie (IISB), Erlangen, 23.07.).
• Danilewsky A. N., Rack A., Wittge J., Weitkamp T., Simon R., Riesenmeier H., Baumbach T.: White Beam Synchrotron Topography Using a High Resolution Digital X-Ray Imaging Detector Nucl Instrum Meth B, 2008; B 266 (9): 2035-2040.
• Danilewsky A. N., Wittge J., Rack A., Weitkamp T., Simon R., McNally P.: White Beam Topography of 300 mm Si -Wafer J Mater Sci-mater El, 2008; 19 Suppl. 1: 269-272 (12th Int. Conf. on Defect -Recognition, Imaging and Physics in Semiconductors DRIP-XII, Sept. 9-13, Berlin). : http://10.1007/s10854-007-9480-5
• Landgraf R., Rieske R., Danilewsky A., Wolter K.-J.: Laser drilled through silicon vias: Crystal defect analysis by synchrotron x-ray topography ESTC 2008. 2nd (Electronics System-Integration Technology Conference, 2008), 2008; 2nd: 1023-1028. : http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4684492
• Lankinen A., Lang T., Suihkonen S., Svensk O., Säynätjoki A., Tuomi T., McNally P. J., Odnoblyudov M., Bougrov V., Danilewsky A. N., Bergmann P., Simon R.: Dislocations at the interface between sapphire and GaN" J Mater Sci-mater El, 2008; 19 (2): 143-148.
• Mühlberg M., Burianek M., Joschko B., Klimm D., Danilewsky A. N., Gelissen M., Bayarjargal L., Görler G. P., Hildmann B. O.: Phase Equilibria, Crystal Growth and Characterization of the Novel Ferroelectric Tungsten Bronzes CaxBa1-xNb2O6 (CBN) and CaxSryBa1-x-yNb2O6 (CSBN) J Cryst Growth, 2008; 310: 2288-2294 (ICCG-15, Salt Lake City, USA, Aug. 12 - 17).
• Rack A., Riesemeier H., Zabler S., Weitkamp T., Müller B., Helfen L., Modregger P., Cholewa M., Danilewsky A. N., Goebbels J., Baumbach T.: The high-resolution synchrotron-based imaging stations at the BAMline (BESSY II) and TopoTomo (ANKA) Proc. SPIE, 2008; 7078-32 (online) (SPIE: Developments in X-Ray Tomography, 12 - 14 Aug. 2008, San Diego, USA). : http://DOI: 10.1117/12.793721
• Bou Sanayeh M., Brick P., Mayer B., Müller M., Reufer M., Schmid W., Streubel K., Schwirzke-Schaaf S., Tomm J. W., Danilewsky A., Bacher G.: Defect investigation and temperature analysis of high-power AlGaInP laser diodes during catastrophic optical damage J Mater Sci-mater El, 2007; 19 Suppl. 1: 155-159. : http://10.1007/s10854-007-9478-z
• Brazil I., McNally P. J., O'Reilly L., Danilewsky A., Tuomi T., Lankinen A., Säynätjoki A., Simon R., Soloviev S., Rowland L.B., Sandvik P.M.: An Evaluation of an Automated Detection Algorithm to Count Defects Present in X-Ray Topographical Images of SiC Wafers Mater Res Bull, 2007; in print (MRS Spring Meeting, San Francisco, USA, April 9 - 13, 2007), MRS (Hrsg).
• Brazil I., McNally P. J., Ren N., O'Reilly L., Danilewsky A., Tuomi T., Lankinen A., Säynätjaki A., Simon R., Soloviev S., Rowland L. B., Sandvik P. M.: An X-ray topographic analysisof the crystal quality of globally available SiC wafers Mater Sci+, 2007; 556-557: 227-230.
• Danilewsky A. N., Rack A., Wittge J., Weitkamp T., Simon R., Riesemeier H., Baumbach T.: White Beam Synchrotron Topography Using a High Resolution Digital X-Ray Imaging Detector Nucl Instrum Meth B, 2007: submitted. (in Druck)
• Danilewsky A. N., Wittge J., Rack A., Weitkamp T., Simon R.: Digital White Beam X-Ray Topography at ANKA Z Kristallogr, 2007 Suppl. 25 (Gemeinsame Jahrestagung DGK/DGKK, 5.-9. März, Bremen).
• Lankinen A., Lang T., Suihkonen S., Svensk O., Säynätjoki A., Tuomi T., McNally P. J., Odnoblyudov M., Bougrov V., Danilewsky A. N., Bergmann P., Simon R.: Dislocations at the interface between sapphire and GaN" J Mater Sci-mater El, 2007; 19 Suppl. 2 (online): 143-148. : http://DOI 10.1007/s10854-007-9307-4 (in Druck)
• Matuchowa, M., Zdansky K., Zavadil J., Danilewsky A. N., Hassan M., Alexiev D.: Electrical, optical and structural properties of lead iodide J Mater Sci-mater El, 2007: submitted (12th Int. Conf. on Defect -Recognition, Imaging and Physics in Semiconductors DRIP-XII, Sept. 9-13, Berlin).
• Mühlberg M., Burianek M., Joschko B., Klimm D., Danilewsky A. N., Gelissen M., Bayarjargal L., Görler G. P., Hildmann B. O.: Phase Equilibria, Crystal Growth and Characterization of the Novel Ferroelectric Tungsten Bronzes CaxBa1-xNb2O6 (CBN) and CaxSryBa1-x-yNb2O6 (CSBN) J Cryst Growth, 2007; in print (ICCG-15, Salt Lake City, USA, Aug. 12 - 17). (in Druck)
• Rack A., Helfen L., Weitkamp T., Danilewsky A. N., Simon R., Lübbert D., Baumbach T.: Synchrotron radiation based imaging methods for industrial applications at the German synchrotron ANKA 2007 (online) (International Symposium on Digital Industrial Radiology and Computed Tomography (DIR2007), June 2007, Lion, France). : http://www.ndt.net/article/dir2007/papers/32.pdf
• Rack A., Martin T., Helfen L., Weitkamp T., Danilewsky A. N., Simon R., Lübbert D., Baumbach T.: Thin LSO-based scintillating mixed-crystal grown by liquid phase epitaxy for high resolution X-ray imaging Ieee T Nucl Sci, 2007 (EEE - 9th International Conference on Inorganic Scintillators and their Applications (SCINT2007), June 4-8, 2007, Winston-Salem, NC. USA, June 2007). (in Druck)
• Säynätjoki A, Lankinen A, Tuomi T, McNally P, Danilewsky A. N., Zhilyaev Y, Fedorov L: Dislocations in GaAs p-i-n diodes grown by hydride vapour phase epitaxy J Mater Sci-mater El, 2007: in print. (in Druck)
• Danilewsky A. N., Doyle S., Göttlicher J., Steininger R., McNally P. J.: Qualitätsprüfung von YB66 Monochromator-Kristallen mit Röntgen-Topographie und -Diffraktometrie Z Kristallogr, 2006; , Suppl. 24: 49 (14. Jahrestagung Deutsche Gesellschaft für Kristallographie).
• Danilewsky A. N., Kek S., Sachs P., Tuomi T., Rantamäki R., McNally P. J., Curley J.: Defect and strain recognition in natural olivine by white beam X-ray topography 2006: 99 (8th Biennial Conference on High Resolution X-ray Diffraction and Imaging, Sept. 19 - 22, Baden-Baden, Germany).
• Noonan D., McNally P. J., Chen W. M., Lankinen A., Knuuttila L., Tuomi T., Danilewsky A. N., Simon R.: The evaluation of mechanical stressesdeveloped in underlying silicon substrates due to electroless nickel under bump metallization using synchrotron x-ray topography Microelectron J, 2006; 37 (11): 1372-1378. (in Druck)
• Danilewsky A, Riikonen J, Tuomi T, Lankinen A, Sormunen J, Säynätjoki A, Knuuttila L, Lipsanen H, McNally P J, O'Reilly L, Sipilä H, Vaijärvi S, Lumb D, Owens A: Synchrotron X-ray topography study of defects in InSb p-i-n structures grown by metal organic vapour phase epitaxy J Mater Sci-mater El, 2005; 16: 449-453.
• Danilewsky A.N., Burianek M., Mühlberg M., Simon R.: Synchrotron Topographie an tetragonalen Wolframbronzen Z Kristallogr, 2005 Suppl. 121: 113 (DGK Jahrestagung 2005, Köln).
• Danilewsky A.N., Fauler A., Fiederle M., O'Reilly L., McNally P.J., Simon R.: Keimauswahl und Versetzungsdichte in Bridgman-gezüchtetem (Cd,Zn)Te Z Kristallogr, 2005; 121 Suppl. 121: 196 (DGKK Jahrestagung 2005, Köln).
• Lankinen A, Tuomi T, Riikonen J, Knuuttila L, Lipsanen H, Sopanen M, Danilewsky A, McNally P J, O’Reilly L, Zhilyaev Y, Fedorov L, Sipilä H, Vaijärvi S, Simon R, Lumb D, Owens A: Synchrotron X-ray topographic study of dislocations and stacking faults in InAs J Cryst Growth, 2005; 283: 320-327.
• Danilewsky A.N., Fauler A., Fiederle M., O'Reilly L., McNally P.J., Simon R.: Real structure analysis and self-seeding behaviour of (Cd,Zn)Te Abstracts of the 14th Int. Conf. on Crystal Growth, 2004 (14th Int. Conf. on Crystal Growth, ICCG-14, Grenoble, France, Aug. 9-13).
• Danilewsky A.N., O'Reilly L., McNally P.J., Lankinen A., Tuomi T., Simon R.: Synchrotron X-Ray Topography at ANKA Z Kristallogr, 2004; 121 Suppl. 121: 87 (gemeinsame Jahrestagung von DGK und DGKK 2004, Jena).
• McNally P. J., Toh B. H. W., McNeill D. W., Danilewsky A.N., Tuomi T., Knuuttila K., Riikonen J., Toivonen J., Simon R.: Geometric linewidth and the impact of thermal processing on the stress regimes induced by electroless copper metallization for Si intergrated circuit interconnect technology J. Appl. Phys., 2004; 96 (12): 7596-7602.
• McNally P. J., Toh B. H. W., McNeill D. W., Tuomi T., Danilewsky A.N., Knuuttila K., Riikonen J., Toivonen J., Simon R.: Comparison of induced stresses due to electroless versus sputtered copper interconnect technology Semicond Sci Tech, 2004; 19: 1280-1284.
• A. N. Danilewsky, R. Simon, A. Fauler, M. Fiederle, K. W. Benz: White Beam X-Ray Topography at the Synchrotron Light Source ANKA, Research Centre Karlsruhe Elsevier Nucl Instrum Meth B, 2003; 199 (1): 71-74.
• Chen W M, McNally P J, Shvydko Yu V, Tuomi T, Danilewsky A, Lerche M: Dislocation analysis for heat-exchanger method grown sapphire with white beam synchrotron X-ray topography Journal of Crystal Growth, 2003; 252: 113-119.
• R. Simon, A. N. Danilewsky: The Experimental Station for White Beam X Ray Topography at the Synchrotron Light Source ANKA Karlsruhe Nucl Instrum Meth B, 2003; 199 (1): 550-553.